The NorthStar™ ALD (Atomic Layer Deposition) system is a versatile research deposition tool for thermal or energy enhanced ALD. With up to 8 precursor lines and a hot wall deposition chamber, a wide range of applications may be performed from a single system. Sample introduction is rapid and convenient with a quick hatch or the optional load lock. The NorthStar™ ALD system can be interfaced with other deposition and metrology tools. Integration of in-situ metrology tools and the RoboALD software/system automation increases process reproducibility.
Applications
— High k dielectrics
— Nanocoatings
— Surface modification layers
— Device encapsulations
— Photonic crystals
Optional add-on components
— Remote plasma source
— Ozone delivery system
— Quartz crystal monitor
— Quadruple mass spectrometer
— Real-time temperature monitor
— Ellipsometer
— LoadLock
ALD Al2O3 film on 4 inch Si wafer
Thickness Non-Uniformity:< 1%
Leakage current <1 nA/cm at 2 MV/cm
Breakdown field: 8 -10 MV/cm
Dielectric constant of as-grown film ~ 8
Specifications Model ALD-P-200B |
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Gas Manifold |
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Carrier Gas Line |
One for Each Manifold (Typically N2 ) |
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Precursor Gas Lines |
Precursor Manifolds with 4 Precursors Each (Optional up to 8 Precursors) Fast ALD High Temp Valves (15 msec) Gas Line Heating to 200 C |
Process Control |
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Robo-ALD Process Control |
Software and Firmware - PLC |
Load Lock (Optional) |
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Load Lock Chamber |
8” (300mm) Wafer Capacity |
如需更詳細資料 或有問題要討論 請電02-2908-1350 #37 洪先生 # 19 楊小姐 或 mail :sung@junsun.com.tw
If you nedd detail data or have any question, please callus or mail to us.
TEL: 02-2908-1350 #37 Mr. Hong or # 19 Miss Yang 或 mail :sung@junsun.com.tw
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